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| PNP RF Amplifier Transistor Surface Mount COLLECTOR 3 MSA1022-CT1 3 1 2 CASE 318D-03, STYLE1 SC-59 2 BASE 1 EMITTER MAXIMUM RATINGS (T A = 25 C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Symbol V CBO V CEO V EBO IC Symbol PD TJ T stg Value -30 -20 -5.0 -30 Max 200 150 -55 ~ +150 Symbo I CBO I CEO I EBO h FE f T Unit Vdc Vdc Vdc mAdc Unit mW C C lMin -- -- -- 110 150 Max -0.1 -100 -10 220 -- Unit Adc Adc Adc -- MHz THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (T A = 25 C) Characteristic Collector Cutoff Current (V CB = -10 Vdc, I E = 0) Collector-Emitter Breakdown Voltage (V CE = -20 Vdc, I B = 0) Emitter-Base Breakdown Voltage (V EB = -5.0 Vdc, I C = 0) DC Current Gain (1) (V CE = -10 Vdc, I C = -1.0 mAdc) Current-Gain - Bandwidth Product (V CB = -10 Vdc, I E = 1.0 mAdc) 1. Pulse Test: Pulse Width < 300 s, D.C. < 2%. DEVICE MARKING Marking Symbol ECX The "X" represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. N1-1/1 |
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